Control of size and density of InAs/(Al,Ga)As self-organized islands
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Control of size and density of InAs/(Al,Ga)As self-organized islands
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Abstract
We report on the influence of the chemical composition of the (Al,Ga)As surface on the formation of strain induced three-dimensional (3D) InAs islands. The experiments have been carried out using a molecular beam epitaxy facility combined with a scanning tunneling microscope enabling in situ surface characterization. The evolution of the density and morphology of these islands is investigated as a function of the Al composition. The InAs deposition, substrate temperature, and annealing time effects on the island formation and morphology are studied. The morphologies of the (Al,Ga)As surface as well as that of the reconstructed InAs wetting layer are also described. Results indicate that there are major differences between the InAs/GaAs and the InAs/AlAs systems despite the same lattice mismatch. We observe these differences varying the aluminum content in the starting (Al,Ga)As surface. We show that control of the Al fraction leads to control of the size and density of the 3D islands. The control of island density and size as well as the growth mode of these islands is explained by considering the difference in surface mobility and cation intermixing between these two systems. Our observation is that strain energy is not the only parameter governing the formation of 3D islands but the chemical nature of the different layers involved is proved to significantly affect island properties. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Control of size and density of InAs/(Al,Ga)As self-organized islands</title> <author><name sortKey="Ballet, P" uniqKey="Ballet P">P. Ballet</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Smathers, J B" uniqKey="Smathers J">J. B. Smathers</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Yang, H" uniqKey="Yang H">H. Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Workman, C L" uniqKey="Workman C">C. L. Workman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Salamo, G J" uniqKey="Salamo G">G. J. Salamo</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0261002</idno><date when="2001-07-01">2001-07-01</date><idno type="stanalyst">PASCAL 01-0261002 AIP</idno><idno type="RBID">Pascal:01-0261002</idno><idno type="wicri:Area/Main/Corpus">011076</idno><idno type="wicri:Area/Main/Repository">00FF91</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Island structure</term><term>Molecular beam epitaxy</term><term>STM</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Semiconductor heterojunctions</term><term>Surface topography</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8105E</term><term>6855J</term><term>8115H</term><term>6835B</term><term>Etude expérimentale</term><term>Indium composé</term><term>Aluminium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Hétérojonction semiconducteur</term><term>Structure îlot</term><term>Epitaxie jet moléculaire</term><term>Couche épitaxique semiconductrice</term><term>Croissance semiconducteur</term><term>STM</term><term>Topographie surface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the influence of the chemical composition of the (Al,Ga)As surface on the formation of strain induced three-dimensional (3D) InAs islands. The experiments have been carried out using a molecular beam epitaxy facility combined with a scanning tunneling microscope enabling in situ surface characterization. The evolution of the density and morphology of these islands is investigated as a function of the Al composition. The InAs deposition, substrate temperature, and annealing time effects on the island formation and morphology are studied. The morphologies of the (Al,Ga)As surface as well as that of the reconstructed InAs wetting layer are also described. Results indicate that there are major differences between the InAs/GaAs and the InAs/AlAs systems despite the same lattice mismatch. We observe these differences varying the aluminum content in the starting (Al,Ga)As surface. We show that control of the Al fraction leads to control of the size and density of the 3D islands. The control of island density and size as well as the growth mode of these islands is explained by considering the difference in surface mobility and cation intermixing between these two systems. Our observation is that strain energy is not the only parameter governing the formation of 3D islands but the chemical nature of the different layers involved is proved to significantly affect island properties. © 2001 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>90</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Control of size and density of InAs/(Al,Ga)As self-organized islands</s1> </fA08><fA11 i1="01" i2="1"><s1>BALLET (P.)</s1></fA11><fA11 i1="02" i2="1"><s1>SMATHERS (J. B.)</s1></fA11><fA11 i1="03" i2="1"><s1>YANG (H.)</s1></fA11><fA11 i1="04" i2="1"><s1>WORKMAN (C. L.)</s1></fA11><fA11 i1="05" i2="1"><s1>SALAMO (G. J.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>481-487</s1></fA20><fA21><s1>2001-07-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0261002</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the influence of the chemical composition of the (Al,Ga)As surface on the formation of strain induced three-dimensional (3D) InAs islands. The experiments have been carried out using a molecular beam epitaxy facility combined with a scanning tunneling microscope enabling in situ surface characterization. The evolution of the density and morphology of these islands is investigated as a function of the Al composition. The InAs deposition, substrate temperature, and annealing time effects on the island formation and morphology are studied. The morphologies of the (Al,Ga)As surface as well as that of the reconstructed InAs wetting layer are also described. Results indicate that there are major differences between the InAs/GaAs and the InAs/AlAs systems despite the same lattice mismatch. We observe these differences varying the aluminum content in the starting (Al,Ga)As surface. We show that control of the Al fraction leads to control of the size and density of the 3D islands. The control of island density and size as well as the growth mode of these islands is explained by considering the difference in surface mobility and cation intermixing between these two systems. 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